Double density mram with planar processing

ABSTRACT

The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.11/401,153 filed Apr. 10, 2006 which is a continuation of U.S.application Ser. No. 10/991,876 filed Nov. 18, 2004, now U.S. Pat. No.7,029,926, issued on Apr. 18, 2006, which is a divisional of U.S.application Ser. No. 10/651,619, filed Aug. 29, 2003, now U.S. Pat. No.7,020,004, issued on Mar. 28, 2006, all which are hereby incorporated byreference in their entireties herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor processing technologyand, in particular, concerns a device and a fabrication process, wherebya magnetic memory structure may be formed.

2. Description of the Related Art

Magnetic memory is a developing technology that offers the advantages ofnon-volatile memory with high-density fabrication. Magnetic memorystructures, such as magneto-resistive random access memory (MRAM),manipulate the magnetic properties of layered magneto-resistivematerials to produce a selective resistance differential across themagnetic memory structure. In one aspect, magnetic memory structuresutilize selective resistance by controlling the alignments of spinstates within multiple layers of material to increase or decrease theresistance of a material. Selectively altering the spin states ofmagneto-resistive materials results in selectively altering theresistance of the magnetic memory structure, which may be sensed therebypermitting the use of layered magneto-resistive materials in logic statedevices.

Conventional magnetic memory devices may comprise a stacked structurethat may include a hard (high coercivity) layer, a soft (low coercivity)layer, and a non-magnetic layer interposed therebetween. The soft orsense layer may be programmed through the application of proximatemagnetic field and the net magnetization vectors between theprogrammable layer and the hard layer may be changed between twodiscrete quantities, which may then be sensed to detect the programmedlogic state of the magnetic memory device.

Additionally, magnetic memory devices, including MRAM, may also bereferred to as a magnetic memory bit. Magnetic memory bits may utilizevarious technologies associated with at least one of, but is not limitedto an anisotropic magnetoresistance (AMR) bit, a giant magnetoresistance(GMR) bit, a pseudo-spin valve (PSV) bit, and a spin-dependent tunneling(SDT) bit. A plurality of magnetic memory bits and the conductors thatinfluence and/or access the magnetic memory bits may be arranged in agrid array, which may be formed on a semiconductor substrate layer, suchas silicon. In a grid array, magnetic memory bits may be positionedadjacent one another and arranged on the substrate so as to beco-planar.

Due to the co-planar arrangement of conventional magnetic memory bits ina magnetic memory grid array, the areal density of the magnetic memorybits within the substrate plane is bounded by at least the amount ofplanar space available on the upper surface of the substrate. Otherfactors that may contribute to limiting density of conventional magneticmemory bits include physical size of the magnetic memory bits and thelevel at which fringe magnetic fields affect neighboring magnetic memorybits. Therefore, there exists a need to increase the fabrication densityof magnetic memory bits, devices and/or structures without adverselyaffecting the performance, reliability, and functionality of themagnetic memory bits, devices, and/or structures.

SUMMARY OF THE INVENTION

The aforementioned needs may be satisfied by a memory device comprising,in one embodiment, a substrate having a first surface, a first memorylayer having a first programmable component formed on the first surfaceof the substrate, wherein the first memory layer can be configured tostore a first logic state therein by selective magnetization of thefirst programmable component, and a second memory layer having a secondprogrammable component formed above the substrate in a manner so as tooverlie the first memory layer, wherein the second memory layer can beconfigured to store a second logic state therein by selectivemagnetization of the second programmable component, and wherein thesecond memory layer increases the storage density of the memory device.

In one aspect, the memory device may further comprise a first pluralityof electrodes that are formed in the first memory layer and electricallyinterconnected to the first programmable component and a secondplurality of electrodes that are formed in the second memory layer andelectrically interconnected to the second programmable component. Also,the first plurality of electrodes may comprise a conductive materialthat generates a first magnetic field when electrical current passesthrough the first plurality of electrodes. The second plurality ofelectrodes comprise a conductive material that generates a secondmagnetic field when electrical current passes through the secondplurality of electrodes.

In addition, the memory device may further comprise a word line that isformed between and proximate to the first and second memory layer. Theword line may comprise a conductive material that generates a thirdmagnetic field when electrical current passes through the word line. Theword line comprises at least one magnetic keeper that is configured toconcentrate the third magnetic field generated by the word line towardsat least one of the first programmable component and the secondprogrammable component.

Moreover, the first memory layer may comprise a plurality of firstprogrammable components that are configured in a grid array havingcolumns and rows. The second memory layer may comprise a plurality ofsecond programmable components that are configured in a grid arrayhaving columns and rows. The memory device may also comprise a pluralityof word lines that are formed between the first and second memory layersin a manner such that each of the word lines defines a column comprisingat least one of the plurality of first programmable components and atleast one of the plurality of second programmable components. The firstprogrammable component and the second programmable component may beselected from the group consisting of a pseudo spin valve (PSV) device,magnetic tunneling junction (MTJ) device, an inline giantmagneto-resistive (GMR) device, and a magneto-resistive random accessmemory (MRAM) device.

The aforementioned needs may also be satisfied by a memory devicecomprising, in one embodiment, a substrate having a first surface, afirst memory layer having a first plurality of memory components formedon the first surface of the substrate, wherein the first plurality ofmemory components are positioned in a first grid array having rows andcolumns, and wherein each of the first plurality of memory componentscan be configured to store a logic state therein by selectivemagnetization, and a second memory layer having a second plurality ofmemory components formed on the first memory layer in an overlyingmanner so as to increase the storage component density of the memorydevice, wherein the second plurality of memory components are positionedin a second grid array having rows and columns, and wherein each of thesecond plurality of memory components can be configured to store a logicstate therein by selective magnetization.

In one aspect, the memory device may further comprise a first pluralityof electrodes that are formed in the first memory layer so as to besubstantially parallel to the rows in the first grid array andelectrically interconnected to the first plurality of programmablecomponents and a second plurality of electrodes that are formed in thesecond memory layer so as to be substantially parallel to the rows inthe second grid array and electrically interconnected to the secondplurality of programmable components. The memory device may stillfurther comprise a plurality of proximate word lines formed between thefirst and second memory layers so as to be substantially parallel to thecolumns of the first and second grid arrays and substantiallyperpendicular to the first and second plurality of electrodes.

In another aspect, selective magnetization of at least one of the firstplurality of memory components may occur when electrical currentsimultaneously passes through at least one of the first plurality ofelectrodes and through the corresponding proximate word line. Inaddition, selective magnetization of at least one of the secondplurality of memory components may occur when electrical currentsimultaneously passes through at least one of the second plurality ofelectrodes and through the corresponding proximate word line. Also, eachof the proximate word lines may generate a proximate magnetic fieldtowards the first and second memory layer. Furthermore, each proximateword line may comprise at least one magnetic keeper that is configuredto concentrate the generated magnetic field towards at least one offirst memory layer and the second memory layer.

The aforementioned needs may be further satisfied by a method of forminga magnetic memory device on a substrate. In one embodiment, the methodmay comprise forming a first and second electrode on the substrate,forming a first magnetic memory component on the first and secondelectrode in a manner so as to be electrically coupled therewith,forming a first insulation layer on the substrate in a manner so as tooverlie the first magnetic memory component and the first and secondelectrode, and forming a word line on the first insulation layer. Themethod may further comprise forming a second insulating layer on thefirst insulating layer in a manner so as to overlie the word line,forming a third and fourth electrode on the second insulating layer,forming a second magnetic memory component on the third and fourthelectrode in a manner so as to be electrically coupled therewith,wherein forming the second magnetic component increases the storage andfabrication density of the memory device, and forming a third insulatinglayer on the second insulating layer in a manner so as to overlie thesecond magnetic memory component and the third and fourth electrodes.

The aforementioned needs may also be satisfied by another method ofincreasing the density of a magnetic memory device having a substrate.In another embodiment, the method may comprise forming a first memorylayer on the substrate, wherein the first memory component comprises atleast one magnetic storage component and a plurality of electrodeselectrically coupled therewith, forming a word line on the first memorylayer, and forming second memory layer above the word line, wherein thesecond memory layer comprises at least one magnetic storage componentand a plurality of electrodes electrically coupled therewith, andwherein forming the second memory layer increases the fabricationdensity of the magnetic memory device.

In one aspect, forming the first memory layer may include planarizingthe first memory layer. In another aspect, the method may furthercomprise forming a first insulation layer between the first memory layerand the word line, wherein forming the word line includes planarizingthe word line. In addition, the method may further comprise forming asecond insulation layer between the word line and the second memorylayer, wherein forming the second memory layer includes planarizing thesecond memory layer. Moreover, the method may still further compriseforming one or more additional memory layers on the second memory layer,wherein the one or more additional memory layers comprise at least onemagnetic storage component and a plurality of electrodes electricallycoupled therewith. Furthermore, the method may yet further compriseforming one or more insulation layers between the additional memorylayers. These and other objects and advantages of the present teachingswill become more fully apparent from the following description taken inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1L illustrate one embodiment of a method of forming amagneto-resistive memory element of a magnetic memory device having atleast a double density structure.

FIG. 1M illustrates one embodiment of a plurality of magnetic memorylayers that may be stacked in a layered configuration so as to form amultiple layer grid array.

FIG. 2A illustrates another embodiment of a magnetic memory device thatmay comprise a plurality of magnetic memory layers having at least oneword line.

FIG. 2B illustrates another embodiment of a plurality of magnetic memorylayers that may be stacked in a layered configuration so as to formanother multiple layer grid array.

FIG. 3A illustrates still another embodiment of a magnetic memory devicethat may comprise a plurality of magnetic memory layers having at leastone word line.

FIG. 3B illustrates still another embodiment of a plurality of magneticmemory layers that may be stacked in a layered configuration so as toform a still another multiple layer grid array.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The present teachings relate to structures and methods for formingmagneto-resistive memory and associated electrode structures. FIGS.1A-1L illustrate one embodiment of a method of forming amagneto-resistive memory element of a magnetic memory device having atleast a double density structure. Reference will now be made to thedrawings wherein like numerals refer to like parts throughout.

FIG. 1A illustrates one embodiment of a substrate 100 having asubstantially planar substrate surface 102 upon which a magnetic memoryelement, such as a magnetic memory device structure, will be fabricatedin accordance with a method of the present teachings. The substrate 100may comprise, for example, layers and structures (not shown) which aregenerally known in the art for the formation of electrical circuitry.

As used herein, the term “substrate” or “semiconductor substrate” shallencompass structures comprising semiconductor material, including, butnot limited to, bulk semiconductor materials such as a semiconductorwafer (either alone or in assemblies comprising other materialsthereon), and semiconductive material layers (either alone or inassemblies comprising other materials). The term “substrate” or“semiconductor substrate” shall also encompass, for example,semiconductor-on-insulator (SOI) structures. In addition, the term“substrate” or “semiconductor substrate” shall further encompass anysupporting structures, including, but not limited to, the semiconductivesubstrates described herein below. Furthermore, when reference is madeto the term substrate within the following description, previous processsteps may have been utilized to form regions, structures, or junctionsin or on its base semiconductor structure or foundation.

It should be appreciated that the scope of the present teachings mayencompass substrates of non-flat surfaces or structures over which aninsulating material may be deposited and then planarized using, forexample, a generally known chemical mechanical planarization (CMP)process to form a substantially planar surface upon which fabrication ofa magnetic memory element, as described herein, may be accomplished inaccordance with a method of the present teachings. In addition, anepitaxial layer, comprising, in one embodiment, Silicon, may be formedon the substrate 100 adjacent the substrate surface 102 using, forexample, a chemical vapor deposition (CVD) process. As is generallyknown in the art, an epitaxial Silicon layer typically comprises fewerimpurities than a Silicon wafer. Therefore, the epitaxial Silicon layercomprises a higher grade of Silicon than the Silicon wafer due to thedeposition of Silicon using the CVD process.

FIG. 1B illustrates one embodiment of a first plurality of electrodesformed on the substrate 100, wherein a first and second electrode 110,112 may be formed below the substrate surface 102 using, for example, agenerally known dual damascene process. The first and second electrodes110, 112 may comprise a conductive material, such as copper (Cu), havinga thickness of approximately 2000 Å. In one aspect, copper is adesirable conductor to use for metalization in integrated circuitry dueto its low resistivity and high electromigration resistance.

As is known in the art, the dual damascene process involves formingrecessed cavities in a substrate, such as the substrate 100. Afterdepositing conductive material, such as copper, in the recessed cavitiesusing known techniques, a CMP process is used to planarize the uppersurface of the substrate so that the upper portion of the conductivematerial is substantially co-planar with the upper surface of thesubstrate 100. It should be appreciated that the first electrode 110 maybe used as a first electrical contact reference point for a firstmagnetic memory element. In addition, the second electrode 112 may beused as a second electrical contact reference point for the firstmagnetic memory element, which will be described in greater detailherein below.

FIG. 1C illustrates one embodiment of a first magnetic memory structure120 formed on the substrate 100 above the substrate surface 102 in amanner so to form a first magnetic memory layer 122. The first magneticmemory structure 120 may also be referred to as a magnetic memory bit,wherein a logic state may be stored in the magnetic memory bit orstructure 120 in a manner that will be described in greater detailherein below. The first magnetic memory structure 120 may comprise, forexample, an magneto-resistive random access memory (MRAM) cell, aninline giant magneto-resistive (GMR) cell, a pseudo-spin valve (PSV)cell, a magnetic tunneling junction (MTJ) cell, or various othergenerally known embodiments of magnetic memory cells. As illustrated inFIG. 1C, the first magnetic memory layer 122 includes the first magneticmemory structure 120 and the corresponding first and second electrodes110, 112.

In one aspect, a conventional magnetic memory structure may compriselayers of magnetic material including at least a hard magnetic layer, aninner layer, a soft magnetic layer, and one or more contact electrodes.It should be appreciated that various practical applications of themagnetic memory structure 120 may further comprise various other layersfor specialized functions without departing from the scope of thepresent teachings. It should also be appreciated that the overallthickness of the magnetic memory structure 120 may vary depending on theparticular application and device configuration used. Therefore, changesand/or alterations to the disclosed embodiment may be made by oneskilled in the art without departing from the scope of the presentteachings.

The hard magnetic layer may comprise, in one embodiment, a “hard”magnetic material, such as a layer of NiFe, NiFeCo, or CoFe, with afirst thickness between about 10 Å and 50 Å. The “hard” magneticmaterial is so called due to its magnetization orientation is maintainedin the face of relatively low magnetic fields used during operation.Magnetic memory stack layers, including the hard magnetic layer, may beformed in a manner generally known in the art by deposition techniques,such as sputter-deposition, physical vapor deposition, or ion-beamdeposition. After deposition of the “hard” magnetic material, the hardmagnetic layer may be planarized using a CMP process so as to provide asubstantially flat, smooth upper surface for the deposition ofadditional overlying layers. In one aspect, the hard layer may bemagnetized in a first fixed direction and acts as a first referencepoint for the net directional magnetization vectors of the magneticmemory structure 120. Accordingly, the hard magnetic layer may also bereferred to herein as the magnetically pinned layer.

The soft magnetic layer may comprise, in one embodiment, a “soft”magnetic material, such as a layer of NiFe, NiFeCo, or CoFe, with asecond thickness of approximately 30 Å and may be positioned above orbelow the hard magnetic layer. The “soft” magnetic material is so-calleddue to its readily re-oriented magnetization by relatively weak magneticfields, and so serves as the “sense” layer in the magnetic memorystructure 120. Magnetic memory stack layers, including the soft layer,are formed in a manner generally known in the art by depositiontechniques, such as sputter-deposition, physical vapor deposition, andion-beam deposition. After deposition of the “soft” magnetic material,the soft magnetic layer may be planarized using a CMP process so as toprovide a substantially flat, smooth upper surface for the deposition ofadditional overlying layers. In one aspect, the soft or sense layer maybe magnetized in the first fixed direction or a second directionopposite of the first direction, depending on an applied magnetic field,and provides a second reference point for the net directionalmagnetization vectors of the magnetic memory structure 120. Accordingly,the soft magnetic layer may also be referred to herein as themagnetically programmable layer.

In one embodiment, PSV cells use an inner layer that may comprise a thinlayer of copper (Cu) that is approximately 10 to 30 Å thick andpositioned interposedly between the hard and soft magnetic layers.Various fabrication techniques utilized for forming the inner layer mayinclude depositing a copper material in a manner generally known in theart using deposition techniques, such as chemical vapor deposition (CVD)and plasma enhanced CVD (PECVD), wherein all may be derived in a mannergenerally known in the art. After deposition of the dielectric material,the inner layer may be planarized using a CMP process so as to provide asubstantially flat, smooth upper surface for the deposition ofadditional overlying layers. In one aspect, the inner layer serves as aconduit for current to flow through the magnetic memory structure 120.In one aspect, the above-mentioned PSV stacked layers of the magneticmemory structure 120 may be oriented and/or positioned to comprise acurrent-in-plane (CIP) configuration, wherein the read and/or writecurrent passes in a substantially parallel manner through the structure120.

In an alternative embodiment, MTJ cells use an inner layer that maycomprise a thin dielectric layer of Aluminum Oxide (Al₂O₃) that isapproximately 10 to 15 Å thick and positioned interposedly between thehard and soft magnetic layers. Various fabrication techniques utilizedfor forming the inner layer may include depositing an aluminum layer ina manner generally known in the art, and, then, oxidation of thealuminum layer may achieved by one of several different methods, such asplasma oxidation, oxidation by air, and ion-beam oxidation, wherein allmay be derived in a manner generally known in the art. After depositionof the dielectric material, the inner layer may be planarized using aCMP process so as to provide a substantially flat, smooth upper surfacefor the deposition of additional overlying layers. In one aspect, thethin dielectric layer serves as a tunneling conduit for excitedelectrons to flow through without causing dielectric breakdown of themagnetic memory structure 120 at low voltages. Accordingly, the innerlayer may also be referred to herein as the tunneling dielectric layer.In one aspect, the above-mentioned TMJ stacked layers of the magneticmemory structure 120 may be oriented and/or positioned to comprise acurrent-perpendicular-to-plane (CPP) configuration, wherein the readand/or write current passes in a substantially perpendicular mannerthrough the structure 120.

In a manner as described above, magnetic memory cells, devices, and/orstructures may comprise vertically ordered layers of material thatexhibit a variable resistance depending on the magnetization state ofthe material. Some magnetic memory cells, devices, and/or structuresincorporate at least two layers of magnetic material separated by atleast one layer of dielectric material. As previously described, themagnetic layers may comprise a hard (magnetically pinned) layer and asoft (magnetically programmable) layer. The selective programmability ofthe soft layer enables the magnetic memory cells, devices, and/orstructures to function as a logic state device, which may be used tostore binary data as directions of net magnetization vectors in at leastone of the magnetic layers. In one aspect, current flow through twoproximate orthogonal conductors may be used to polarize the magneticcomponents of the soft layer in either a parallel or antiparalleldirection.

Therefore, the parallel and antiparallel magnetization states of themagnetic layers may correspond to at least two different resistancestates, wherein a high and low resistance state may represent a logical“1” or “0,” respectively. In other words, when the magnetic materialsare layered in a particular fashion, they may exhibit a variablevertical electrical resistance depending on the magnetization state ofthe individual layers. For example, if the magnetic layers areindividually magnetized in the same (parallel) direction, the magneticmemory cells, devices, and/or structures exhibit a low electricalresistance. Whereas, if the magnetic layers are individually magnetizedin opposite (antiparallel) direction, the magnetic cells, devices,and/or structures exhibit a high electrical resistance. In one aspect,when the magnetic components of the layers are aligned in parallel, thecurrent may travel through the magnetic material with minimalscattering, which may result in an overall lower resistance. However, inthe case where magnetic layers are oppositely magnetized, the currentmay flow with increased scattering due to the antiparallel orientationof the magnetic components.

As described above, the first magnetic memory structure 120 representsone of many useable configurations of a magnetic memory cell structurein a stacked formation. In one embodiment, there are essentially twoconducting layers that are separated by a thin dielectric layer. Inother arrangements, the skilled artisan will appreciate that the orderof the layers may be altered, such that the magnetically programmablelayer is positioned above or below the magnetically fixed layer, whilemaintaining the interposed position of the tunneling dielectric layer.It should be appreciated that practical applications of the proposedmagnetic memory cell structure may include other layers for specializedfunctions without departing from the scope of the present teachings.

FIG. 1D illustrates one embodiment of a first insulating layer 126formed on the first magnetic memory layer 122 in a manner so as tooverlie the magnetic memory structure 120 and the correspondingelectrodes 110, 112. The first insulating layer 126 may comprise aninsulating material, such as silicon-dioxide (SiO₂), having a thicknessof approximately 4000 Å. After deposition of the insulating material,the first insulating layer 126 may be planarized using a CMP process soas to provide a substantially flat, smooth upper surface for thedeposition of additional overlying layers. As illustrated in FIG. 1D,the first insulating layer 126 serves as an insulating and spacingbarrier between a plurality of stacked magnetic memory layers in amanner as will be described in greater detail herein below.

FIGS. 1E-1H illustrate the formation of one embodiment of a word line130 having a first and second keeper 132, 134 that may be formedadjacent to the upper surface of the first insulating layer 126. Itshould be appreciated that the keepers 132, 134 may also be referred toas magnetic keepers without departing from the scope of the presentteachings.

FIG. 1E illustrates one embodiment of a first recessed well 124 formedin the first insulating layer 126. The first recessed well 124, having adepth of approximately 2000 Å and a width of approximately 4300 Å, maybe formed adjacent to the upper surface of the first insulating layer126 and above the magnetic memory structure 120 using a generally knownpattern and etch technique. In a preferred embodiment, the etchingtechnique may comprise a generally known anisotropic etching techniqueso as to form substantially vertical walls in the first recessed well124 in a manner as illustrated in FIG. 1E.

FIG. 1F illustrates one embodiment of a keeper layer 127 formed in thefirst recessed well 124 of FIG. 1E in a manner so as to fill the firstrecessed well 124 adjacent the upper surface of the first insulatinglayer 126. The keeper layer 127 may be deposited using generally knowndeposition techniques, such as such as sputter-deposition, physicalvapor deposition, and ion-beam deposition and then planarized to theupper surface of the first insulating layer 126 using a generally knownCMP process. In one aspect, the keeper layer 127 may be uniformlydeposited so as to overlie the first insulating layer 126 including thefirst recessed well 124. In addition, the keeper layer 127 may comprisea magnetic material, such as Ni₈₀Fe₂₀, having a thickness ofapproximately 400 Å.

FIG. 1G illustrates the formation of first and second magnetic keepers132, 134 at each distal end of the keeper layer 127 by forming a secondrecessed well 128 in the keeper layer 127. The second recessed well 128,having a depth of approximately 2000 Å and a width of approximately 3500Å, may be formed in the same manner as described with reference to theformation of the first recessed well 124 in FIG. 1E. In one embodiment,the first and second magnetic keepers 132, 134 may comprise a thicknessor height 136 of approximately 2000 Å and a width 138 of approximately400 Å. The scope and functionality of the magnetic keepers 132, 134 willbe described in greater detail herein below with reference to FIG. 1H.

FIG. 1H illustrates one embodiment of a word line 130 formed in thesecond recessed well 128 and adjacent to the upper surface of the firstinsulating layer 126. As illustrated in FIG. 1H, the word line 130 isfurther formed in a manner so as to be interposed between the first andsecond magnetic keepers 132, 134. In one aspect, the word line 130 maybe formed below the upper surface of the first insulating layer 126using, for example at least in part, a generally known dual damasceneprocess. The process of forming the word line 130 is similar toabove-described process of forming the first and second electrodes 110,112 in FIG. 1B. The word line 130 may comprise a conductive material,such as copper, having a thickness of approximately 2000 Å. In oneaspect, the word line 130 comprises a proximate conductor that serves asa magnetic field generator for the purpose of programming the netmagnetization vectors of the magnetic memory structure 120, wherein theword line 130 may be positioned substantially perpendicular to theelectrodes 110, 112. As is known in the art, the net magnetizationvectors of the magnetic memory structure 120 may be altered and/orchanged by current flowing in a proximate conductor.

In one embodiment, the first and second keepers and/or magnetic keepers132, 134 may be utilized as magnetic field or flux concentrators, whichmay be configured to influence the direction of the magnetic field fromthe word line 130 in an upward and/or downward direction relative to theword line 130. In one aspect, a “soft” magnetic material may bedeposited on the sides of the word line 130 to serve as magnetic keeperlayers, which may assist with concentrating the magnetic field generatedby current flowing through the conductive word line 130 away from thesides of the word line 130 and towards the upper and lower regions ofthe word line 130. In a manner as previously described, the first andsecond magnetic keepers 132, 134 may be positioned adjacent the wordline 130 as illustrated in FIG. 1H. For further description relating tothe scope and functionality of magnetic keepers, the Applicant'sco-pending patent application entitled “A Method for Building a MagneticKeeper or Flux Concentrator Used for Writing Magnetic Bits” (Ser. No.10/226,623 now U.S. Pat. No. 6,914,805) is hereby incorporated byreference in its entirety.

FIG. 1I illustrates one embodiment of a second insulating layer 140formed on the upper surface of the first insulating layer 126 in amanner so as to overlie the first insulating layer 126 and the word line130 including the magnetic keepers 132, 134. Similar to the firstinsulating layer 126, the second insulating layer 140 may comprise aninsulating material, such as silicon-dioxide (SiO₂), having a thicknessof approximately 4000 Å. After deposition of the insulating material,the second insulating layer 140 may be planarized using a CMP process soas to provide a substantially flat, smooth upper surface for thedeposition of additional overlying layers. As illustrated in FIG. 1I,the second insulating layer 140 serves as an additional insulating andspacing barrier between stacked magnetic memory layers in a manner aswill be described in greater detail herein below.

FIG. 1J illustrates one embodiment of a second plurality of electrodesformed on the second insulating layer 140, wherein a third and fourthelectrode 150, 152 may be formed below the upper surface of the secondinsulating layer 140 using, for example, a generally known dualdamascene process. Similar to the first and second electrodes 110, 112,the third and fourth electrodes 150, 152 may comprise a conductivematerial, such as copper, having a thickness of approximately 2000 Å. Aspreviously described, copper is a desirable conductor to utilize andimplement for metalization in integrated circuitry due to its lowresistivity and high electromigration resistance.

As previously described with reference to FIG. 1B, the dual damasceneprocess involves forming recessed cavities in a substrate material, suchas the second insulating layer 140. After depositing conductivematerial, such as copper, in the recessed cavities using knowntechniques, a CMP process is used to planarize the upper surface of thesubstrate such that the upper portion of the conductive material issubstantially co-planar with the upper surface of the second insulatinglayer 140. It should be appreciated that the third electrode 150 may beused as a first electrical contact reference point for a second magneticmemory element. In addition, the fourth electrode 152 may be used as asecond electrical contact reference point for the second magnetic memoryelement, which will be described in greater detail herein below.

FIG. 1K illustrates one embodiment of a second magnetic memory structure160 formed on the upper surface of the second insulating layer 140 in amanner so to form a second magnetic memory layer 162. Similar to thefirst magnetic memory structure 120, the second magnetic memorystructure 160 may comprise, for example, an MRAM cell, magnetictunneling junction (MTJ) cell, a pseudo-spin valve cell, or variousother generally known embodiments of magnetic memory cells. Asillustrated in FIG. 1K, the second magnetic memory layer 162 includesthe second magnetic memory structure 120 and the corresponding third andfourth electrodes 150, 152.

In one aspect, the second magnetic memory structure 160 may comprisesimilar scope, composition, and functionality as with the first magneticmemory structure 120. Additionally, each layer of the second magneticmemory structure 160 may be planarized using a CMP process so as toprovide a substantially flat, smooth upper surface for the deposition ofother overlying layers. In one embodiment of the present teachings, theformation of the first and second magnetic memory layers 122, 162,including the first and second magnetic memory structures 120, 160 andthe first, second, third, and fourth electrodes 110, 112, 150, 152,would involve the same processing steps. It should be appreciated that,depending on the particular application of the device, the first andsecond magnetic memory structures 120, 160 may comprise different cellconfigurations without departing from the scope of the presentteachings.

As previously described above, the second magnetic memory structure 160represents one of many useable configurations of a magnetic memory cellstructure in a stacked formation. In one embodiment, there areessentially two conducting layers that are separated by a thindielectric layer. In other arrangements, the skilled artisan shouldappreciate that the sequential order of layers may be altered and/orchanged, such that the “soft” layer is positioned above or below the“hard” layer, while maintaining the interposed position of the innerlayer. It should be appreciated that most practical applications of theabove-mentioned magnetic memory cell structure may include variouslayers comprising specialized functions without departing from the scopeor spirit of the present teachings.

FIG. 1L illustrates one embodiment of a third insulating layer 156formed on the upper surface 142 of the second insulating layer 140 in amanner so as to overlie the second insulating layer 140 and the secondmagnetic memory layer 162. The third insulating layer 156 may comprisean insulating material, such as silicon-dioxide (SiO₂), having athickness of approximately ≧5000 Å. After deposition of the insulatingmaterial, the third insulating layer 156 may be planarized using a CMPprocess so as to provide a substantially flat, smooth upper surface forthe deposition of, for example, additional overlying layers. Asillustrated in FIG. 1L, the third insulating layer 156 serves as aninsulating barrier between second magnetic memory layer 162 in a mannerso as to provide insulation from the environment and/or other integratedcircuit components. Due to the physical arrangements of theabove-mentioned layers, magnetic memory structures may follow the samehigh-density fabrication techniques as their semiconductor counterpart.

FIG. 1L further illustrates one embodiment of a magnetic memory device180 having at least two magnetic memory layers 122, 162 and at least oneword line 130 that may be formed by the above-mentioned fabricationprocess as referenced by FIGS. 1A-1L. It should be appreciated that oneor more word lines 130 may be used in the first magnetic memory device180 to program the magnetic memory structures 120, 160 by one skilled inthe art without departing from the scope of the present teachings.

As further illustrated in FIG. 1L, the at least two magnetic memorylayers 122, 162 and at least one word line 130 may be formed andpositioned in a column configuration, wherein the at least one word line130 may be used to influence and/or program the magneticallyprogrammable logic state of one or more of the at least two magneticmemory layers 122, 162. It should be appreciated that the at least twomagnetic memory layers 122, 162 and the at least one word line 130 maybe formed and positioned in a row configuration without departing fromthe scope of the present teachings.

In one aspect, a plurality of magnetic memory structures or bits may bepositioned adjacent to each other and interconnected in a manner so asto form a grid array within a single magnetic memory layer. Asillustrated in FIG. 1M, a plurality of magnetic memory layers may bestacked so as to form one embodiment of a multiple layer grid array 190,wherein the first magnetic memory layer 122 may comprise a firstplurality of magnetic memory structures or bits configured in a firstgrid array, and the second magnetic memory layer 162 may comprise asecond plurality of magnetic memory structures or bits in a second gridarray. As further illustrated in FIG. 1M, a plurality of word lines 130may be interposedly positioned between the first and second memorylayers 122, 162 so as to form a column of magnetic memory structures orbits.

Advantageously, the illustrated double density configuration 190 of themagnetic memory device 180 comprises increased storage capacity andpreferably uses one word line 130 to write to a column of magneticmemory bits 120, 160. It should be appreciated that additional magneticmemory layers may be formed above and below the first and secondmagnetic memory layers 122, 162 in a manner as previously described withreference to FIGS. 1A-1L, wherein the magnetic memory device 180, whichmay include devices such as MRAM, may comprise one or more stackedmagnetic memory cells, structures, and/or layers to improve componentdensity.

It should also be appreciated that the current flowing in the word line130 and the distance between structures 120, 130, 160 may be selected sothat the generated magnetic field by the first word line 130 affects orinfluences the magnetization state of the first and second magneticmemory structure 120, 160 in a manner that is substantially similar.Preferably, the generated magnetic field by the word line 130 affectsand influences the first magnetic memory structure 120 when a current ispresent in the first and second electrodes 110, 112. Additionally, thegenerated magnetic field by the word line 130 affects and influences thesecond magnetic memory structure 160 when a current is present in thethird and fourth electrodes 150, 152. In one aspect, the magnetic fieldgenerated in the first and second electrodes 110, 112 does not interferewith the magnetic field generated by the current in the third and fourthelectrodes 150, 152.

FIG. 2A illustrates another embodiment of magnetic memory device 280further comprising a plurality of magnetic memory layers 122, 162, 222having at least one word line 130. As illustrated in FIG. 2A, themagnetic memory device 280 may comprise the same scope and functionalityof the magnetic memory device 180 as illustrated in FIGS. 1A-1L with theaddition of a third magnetic memory layer 222. It should be appreciatedthat additional magnetic memory layers may be formed above and/or belowthe first and second magnetic memory layers 122, 162 in a manner aspreviously described by one skilled in the art without departing fromthe scope of the present teachings. In addition, it should also beappreciated that the order in which the magnetic memory layers 122, 162,222, including the at least one word line 130, are positionally orientedand/or configured may be changed and/or altered by one skilled in theart without departing from the scope of the present teachings.

In one embodiment, a fourth insulating layer 200 may be formed on theupper surface of the third insulating layer 156 in a manner so as tooverlie the third insulating layer 156 and provide a surface 202 forforming the additional (third) magnetic memory layer 222. In one aspect,the third magnetic memory layer 222 may comprise a third plurality ofelectrodes formed on the third insulating layer 156, wherein a fifth andsixth electrode 210, 212 may be formed below the upper surface of thethird insulating layer 156 using, for example, a generally known dualdamascene process. In addition, the third magnetic memory layer 222 mayfurther comprise a third magnetic memory structure 220, which may beformed in a similar manner as with the first and second magnetic memorystructures 120, 160. After forming the third magnetic memory layer 222,a fifth insulating layer 216 may be formed on the upper surface of thefourth insulating layer 200 in a manner so as to overlie the fourthinsulating layer 200 and the third magnetic memory layer 222 in a manneras previously described with reference to the third insulating layer 156in FIG. 1L.

Advantageously, as illustrated in FIG. 2A, a plurality of magneticmemory layers 122, 162, 222 may be configured in a column orientation tocomprise a plurality of magnetic memory structures or bits 120, 160, 220that may be programmed using a single word line 130. The current throughthe word line 130 may be adjusted to influence the one or more magneticmemory bits 120, 160, 220. By layering magnetic memory bits 120, 160,220 above the substrate 100 in a column orientation, an increase inareal device density of magnetic memory may be achieved withoutincreasing the substrate surface requirement for increased devicedensity. Therefore, in one aspect, the areal density of the magneticmemory bits within the substrate plane is no longer bounded by at leastthe amount of planar space available on the upper surface of thesubstrate. Additionally, by using a single word line 130 to influencethe programmable magnetization of a plurality of magnetic memory bits121, 160, 210, an increase in device efficiency may also be achieved. Asa result, an increase in magnetic memory device performance,reliability, and functionality is achieved.

Additionally, as illustrated in FIG. 2B, a plurality of magnetic memorystructures or bits may be positioned adjacent to each other andinterconnected in a manner so as to form another embodiment of amultiple layer grid array 290 using the plurality of magnetic memorylayers 122, 162, 222. In one aspect, the first magnetic memory layer 122may comprise the first plurality of magnetic memory structures or bitsconfigured in the first grid array, the second magnetic memory layer 162may comprise the second plurality of magnetic memory structures or bitsin the second grid array, and a third magnetic memory layer 222 maycomprise a third plurality of magnetic memory structures or bits in athird grid array. As further illustrated in FIG. 2B, a plurality of wordlines 130 may be interposedly positioned between the first, second, andthird memory layers 122, 162, 222 so as to form a plurality of columnseach having a plurality of magnetic memory structures or bits.

Advantageously, the illustrated triple density configuration 290 of themagnetic memory device 280 of FIG. 2A may comprise increased storagecapacity and preferably uses a single column positioned word line 130 towrite to a single column of magnetic memory bits 120, 160, 222. Itshould be appreciated that one or more additional magnetic memory layersmay be formed above and/or below the first, second, and third magneticmemory layers 122, 162, 222 in a manner as previously described, whereinthe first magnetic memory device 180, which may include devices such asMRAM, may comprise one or more stacked magnetic memory cells,structures, layers, and/or grid arrays to improve component densitywithout departing from the scope of the present teachings.

FIG. 3A illustrates still another embodiment of a magnetic memory device300 that may comprise a plurality of magnetic memory layers 122, 362having at least one word line 130. In one aspect, the third magneticmemory device 300 may comprise the same scope and functionality of thefirst magnetic memory device 180 as illustrated in FIGS. 1A-1L with theformation of first and fourth electrodes above the upper surface 142 ofthe second insulating layer 140. It should be appreciated that theelectrodes 150, 152 may be formed using a generally known pattern andetch metallization technique, such as chemical vapor deposition (CVD).In addition, the electrodes 150, 152 may be positionally oriented in amanner so as to electrically interconnect with the second magneticmemory structure 160 and form a fourth magnetic memory layer 362.

FIG. 3B illustrates yet another embodiment of a magnetic memory device320 that may comprise a plurality of magnetic memory layers 122, 362,392 having at least one word line 130. As illustrated in FIG. 3B, themagnetic memory device 320 may comprise the same scope and functionalityof the magnetic memory device 300 as illustrated in FIG. 3A with theaddition of another (fifth) magnetic memory layer 392. It should beappreciated that additional magnetic memory layers may be formed aboveor below the first and fourth magnetic memory layers 122, 162 in amanner as previously described by one skilled in the art withoutdeparting from the scope of the present teachings. In addition, itshould also be appreciated that the order in which the magnetic memorylayers 122, 362, 392, including the at least one word line 130, arepositionally oriented and/or configured may be changed and/or altered byone skilled in the art without departing from the scope of the presentteachings.

In one embodiment, a fifth magnetic memory structure 390 and a pluralityof electrodes 380, 382 may be formed on the upper surface of the thirdinsulating layer 156 in a manner as previously described with referenceto the fourth magnetic memory layer 362 in FIG. 3A. In addition, afterforming the fifth magnetic memory layer 392, a sixth insulating layer386 may be formed on the upper surface of the third insulating layer 156in a manner so as to overlie the third insulating layer 156 and thefifth magnetic memory layer 392.

Although the following description exemplifies one embodiment of thepresent teachings, it should be understood that various omissions,substitutions, and changes in the form of the detail of the apparatus,system, and/or method as illustrated as well as the uses thereof, may bemade by those skilled in the art, without departing from the scope ofthe present teachings. Consequently, the scope of the present teachingsshould not be limited to the disclosed embodiments, but should bedefined by the appended claims.

1. A memory device comprising: a first magnetic memory structureincluding a first plurality of electrodes in electrical contact with thefirst magnetic memory structure, wherein the first magnetic memorystructure can store a first logic state therein by selectivemagnetization of the first magnetic memory structure; and at least asecond magnetic memory structure including a second plurality ofelectrodes in independent electrical contact with the second memorystructure, wherein the at least second magnetic memory structure isadjacent the first magnetic memory structure and wherein the at leastsecond magnetic memory structure can be configured to independentlystore a second logic state therein by selective magnetization of thesecond memory structure; and a word line arranged adjacent the first andthe at least second magnetic memory structures, such that a currentprovided to the word line generates a word line magnetic field toprovide the selective magnetization to store both the first and thesecond logic states.
 2. The memory device of claim 1, wherein thecurrent provided to the word line stores the first and second logicstates respectively when current is also provided to the first andsecond pluralities of electrodes respectively.
 3. The memory device ofclaim 1, wherein current provided to the first or second plurality ofelectrodes is not operationally effective on the other of the second orfirst magnetic memory structure respectively.
 4. The memory device ofclaim 1, wherein the word line is interposed between the first andsecond magnetic memory structures.
 5. The memory device of claim 1,wherein the word line is arranged on the same side of the first andsecond magnetic memory structures.
 6. The memory device of claim 1,wherein the first and second magnetic memory structures are generallyaligned with each other in a vertical dimension.
 7. The memory device ofclaim 1, wherein the word lines comprise at least one magnetic keeperthat is configured to concentrate the word line magnetic field generatedby the word line towards at least one of the first memory structure andthe second memory structure.
 8. The memory device of claim 7, whereinthe at least one magnetic keeper is configured to concentrate the wordline magnetic field preferentially in an upward/downward direction. 9.The memory device of claim 1, comprising a plurality of the first andsecond magnetic memory structures and a plurality of associated wordlines arranged to define a memory array of the memory devices.
 10. Thememory device of claim 1, wherein the first magnetic memory structureand the second magnetic memory structure of each memory device is eachsubstantially vertically aligned with the respective word line.
 11. Thememory device of claim 1, wherein at least one of the first and secondplurality of electrodes is arranged to extend substantiallyperpendicular to the word line.
 12. The memory device of claim 1,wherein the first magnetic memory structures and the second magneticmemory structures are selected from the group consisting of pseudo spinvalve (PSV) devices, magnetic tunneling junction (MTJ) devices, inlinegiant magneto-resistive (GMR) devices, and magneto-resistive randomaccess memory (MRAM) devices.
 13. The memory device of claim 1, whereinone or both of the first and second plurality of electrodes are arrangedsubstantially at a same layer of the device as the associated first andsecond magnetic memory structures.
 14. The memory device of claim 1,wherein one or both of the first and second plurality of electrodes arearranged substantially at a different layer of the device as theassociated first and second magnetic memory structures.
 15. A magneticmemory device comprising: a first magnetic memory element; first andsecond electrodes connected to the first magnetic memory element; asecond magnetic memory element; third and fourth electrodes connected tothe second magnetic memory element; a word line arranged adjacent boththe first and the second magnetic memory elements such that currentprovided to the word line generates a magnetic field sufficient toaffect a magnetization of the first and second magnetic memory elementsin a substantially similar manner; and insulating material arrangedaround the first and second magnetic memory elements and the word line.16. The memory device of claim 15, further comprising at least onekeeper arranged along at least one side of the word line.
 17. The memorydevice of claim 15, wherein the first and second magnetic memoryelements are generally aligned with each other in a vertical direction.18. The memory device of claim 17, wherein the first and second magneticmemory elements are further generally aligned with the word line. 19.The memory device of claim 17, wherein the word line is interposedbetween the first and the second magnetic memory elements.
 20. A memoryarray comprising: a first layer of magnetic memory elements; a pluralityof first and second electrodes connected to the first magnetic memoryelements; a second layer of magnetic memory elements; a plurality ofthird and fourth electrodes connected to the second magnetic memoryelement; a plurality of word lines each arranged adjacent respectivefirst and second magnetic memory elements such that current provided tothe word lines generates a magnetic field sufficient to affect amagnetization of the respective adjacent first and second magneticmemory elements in a substantially similar manner and such that thememory array defines a double density configuration with respect to agiven word line; and insulating material arranged around the first andsecond layers of magnetic memory elements and the word lines.
 21. Thememory array of claim 20, further comprising keepers arranged along atleast one side of the word lines.
 22. The memory array of claim 21,comprising keepers arranged at opposite sides of the word lines.
 23. Thememory array of claim 20, wherein the first and second magnetic memoryelements are generally aligned with each other in a vertical direction.24. The memory array of claim 23, wherein the first and second magneticmemory elements are further generally vertically aligned with theassociated word lines so as to define columns of the array.
 25. Thememory array of claim 20, wherein the word lines are interposed betweenthe first and the second layers of magnetic memory elements.